AO4800B 30v dual n-channel mosfet general description product summary v ds i d (at v gs =10v) 6.9a r ds(on) (at v gs =10v) < 27m w r ds(on) (at v gs = 4.5v) < 32m w r ds(on) (at v gs = 2.5v) < 50m w 100% uis tested 100% r g tested symbol v ds the AO4800B uses advanced trench technology to provide excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in buck converters. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v drain-source voltage 30 g2 d1 s2 g1 d1 s1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view soic-8 top view bottom view pin1 v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl maximum junction-to-ambient a maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 90 40 c/w r q ja power dissipation b p d pulsed drain current c continuous drain current t a =25c avalanche current c avalanche energy l=0.1mh c a 14 t a =25c t a =70c a i d 6.9 5.8 30 v drain-source voltage 30 48 74 62.5 v 12 gate-source voltage junction and storage temperature range -55 to 150 c thermal characteristics units parameter typ max 10 mj 1.3 t a =70c w 2 g2 d1 s2 g1 d1 s1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view soic-8 top view bottom view pin1 rev 4: dec 2011 www.aosmd.com page 1 of 6
AO4800B symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.7 1.1 1.5 v i d(on) 30 a 17.8 27 t j =125c 28 40 19 32 m w 24 50 m w g fs 33 s v sd 0.7 1 v i s 2.5 a c iss 630 pf c oss 75 pf c rss 50 pf r g 1.5 3 4.5 w q g 6 7 nc q gs 1.3 nc q gd 1.8 nc t d(on) 3 ns t 2.5 ns on state drain current i d =250 m a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =6.9a reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage zero gate voltage drain current gate-body leakage current i s =1a,v gs =0v v ds =5v, i d =5a v gs =2.5v, i d =5a v gs =4.5v, i d =6a forward transconductance diode forward voltage v ds =v gs i d =250 m a v ds =0v, v gs = 12v m w gate resistance v gs =0v, v ds =0v, f=1mhz maximum body-diode continuous current input capacitance output capacitance dynamic parameters turn-on delaytime turn-on rise time r ds(on) static drain-source on-resistance v =10v, v =15v, r =2.2 w , total gate charge v gs =4.5v, v ds =15v, i d =6.9a gate source charge gate drain charge t r 2.5 ns t d(off) 25 ns t f 4 ns t rr 8.5 ns q rr 2.6 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =6.9a, di/dt=100a/ m s body diode reverse recovery charge i f =6.9a, di/dt=100a/ m s turn-on rise time turn-off delaytime body diode reverse recovery time v gs =10v, v ds =15v, r l =2.2 w , r gen =3 w turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 4: dec 2011 www.aosmd.com page 2 of 6
AO4800B typical electrical and thermal characteristics 17 52 10 0 18 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =6.9a v gs =4.5v i d =6a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2v 4.5v 10v 2.5v 3v 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =6.9a v gs =4.5v i d =6a 10 20 30 40 50 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =6.9a 25 c 125 c 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2v 4.5v 10v 2.5v 3v rev 4: dec 2011 www.aosmd.com page 3 of 6
AO4800B typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =6.9a 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 1.0 10.0 100.0 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 9: single pulse avalanche capability (note c ) t a =25 c t a =150 c t a =100 c t a =125 c 0 1 2 3 4 5 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =6.9a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 11: single pulse power rating junction-to-am bient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 1.0 10.0 100.0 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 9: single pulse avalanche capability (note c ) t a =25 c t a =150 c t a =100 c t a =125 c rev 4: dec 2011 www.aosmd.com page 4 of 6
AO4800B typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90 c/w 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =90 c/w rev 4: dec 2011 www.aosmd.com page 5 of 6
AO4800B - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & w aveforms t t r d(on) t on t d(off) t f t off vdd vgs id + l vgs vds bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & w aveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & w aveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 4: dec 2011 www.aosmd.com page 6 of 6
|
